? semiconductor components industries, llc, 2009 august, 2009 ? rev. 3 1 publication order number: bcx71j/d BCX71JLT1G general purpose transistor pnp silicon features ? moisture sensitivity level: 1 ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings rating symbol value unit collector ? emitter voltage v ceo ? 45 vdc collector ? base voltage v cbo ? 45 vdc emitter ? base voltage v ebo ? 5.0 vdc collector current ? continuous i c ? 100 madc thermal characteristics characteristic symbol max unit total device dissipation (note 1) t a = 25 c derate above 25 c p d 350 2.8 mw mw/ c storage temperature t stg 150 c thermal resistance, junction-to-ambient (note 1) r ja 357 c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. package mounted on 99.5% alumina 10 x 8 x 0.6 mm. sot ? 23 case 318 style 6 marking diagram 1 3 2 device package shipping ? ordering information collector 3 1 base 2 emitter http://onsemi.com BCX71JLT1G sot ? 23 (pb ? free) 3000/tape & reel bj = device code m = date code* = pb ? free package *date code orientation and/or overbar may vary depending upon manufacturing location. (note: microdot may be in either location) bj m ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
BCX71JLT1G http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter breakdown voltage (i c = 2.0 madc, i b = 0) v (br)ceo ? 45 ? vdc collector ? base breakdown voltage (i e = 1.0 adc, i e = 0) v (br)ebo ? 5.0 ? vdc collector cutoff current (v ce = 32 vdc) (v ce = 32 vdc, t a = 150 c) i ces ? ? ? 20 ? 20 nadc adc on characteristics dc current gain (i c = 10 adc, v ce = 5.0 vdc) (i c = 2.0 madc, v ce = 5.0 vdc) (i c = 50 madc, v ce = 1.0 vdc) (i c = 2.0 madc, v ce = 5.0 vdc, f = 1.0 khz) h fe 40 250 100 250 ? 460 ? 500 ? collector ? emitter saturation voltage (i c = 10 madc, i b = 0.25 madc) (i c = 50 madc, i b = 1.25 madc) v ce(sat) ? ? ? 0.25 ? 0.55 vdc base ? emitter saturation voltage (i c = 1.0 madc, v ce = 5.0 vdc) (i c = 10 madc, v ce = 5.0 vdc) v be(sat) ? 0.6 ? 0.68 ? 0.85 ? 1.05 vdc base ? emitter on voltage (i c = 2.0 madc, v ce = 5.0 vdc) v be(on) ? 0.6 ? 0.75 vdc output capacitance (v ce = 10 vdc, i c = 0, f = 1.0 mhz) c obo ? 6.0 pf noise figure (i c = 0.2 madc, v ce = 5.0 vdc, r s = 2.0 k , f = 1.0 khz, bw = 200 hz) nf ? 6.0 db switching characteristics turn ? on time (i c = 10 madc, i b1 = 1.0 madc) t on ? 150 ns turn ? off time (i b2 = 1.0 madc, v bb = 3.6 vdc, r1 = r2 = 5.0 k , r l = 990 ) t off ? 800 ns typical noise characteristics (v ce = ? 5.0 vdc, t a = 25 c) figure 1. noise voltage f, frequency (hz) 5.0 7.0 10 3.0 figure 2. noise current f, frequency (hz) 1.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.1 i c = 10 a 100 a e n , noise voltage (nv) i n , noise current (pa) 30 a bandwidth = 1.0 hz r s ? i c = 1.0 ma 300 a 100 a 30 a 10 a 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 2.0 1.0 ma 0.2 300 a bandwidth = 1.0 hz r s 0
BCX71JLT1G http://onsemi.com 3 noise figure contours (v ce = ? 5.0 vdc, t a = 25 c) 500k 100 200 500 1.0k 10k 5.0k 20k 50k 100k 200k 2.0k 1.0m 500k 100 200 500 1.0k 10k 5.0k 20k 50k 100k 200k 2.0k 1.0m figure 3. narrow band, 100 hz i c , collector current ( a) figure 4. narrow band, 1.0 khz i c , collector current ( a) 10 0.5 db bandwidth = 1.0 hz r s , source resistance (ohms) r s , source resistance (ohms) figure 5. wideband i c , collector current ( a) 10 10 hz to 15.7 khz r s , source resistance (ohms) noise figure is defined as: nf 20 log 10 e n 2 4ktr s i n 2 r s 2 4ktr s 1 2 = noise voltage of the t ransistor referred to the input. (figure 3) = noise current of the transistor referred to the input. (figure 4) = boltzman?s constant (1.38 x 10 ? 23 j/ k) = temperature of the source resistance ( k) = source resistance (ohms) e n i n k t r s 1.0 db 2.0 db 3.0 db 20 30 50 70 100 200 300 500 700 1.0k 10 20 30 50 70 100 200 300 500 700 1.0k 500k 100 200 500 1.0k 10k 5.0k 20k 50k 100k 200k 2.0k 1.0m 20 30 50 70 100 200 300 500 700 1.0k bandwidth = 1.0 hz 5.0 db 0.5 db 1.0 db 2.0 db 3.0 db 5.0 db 0.5 db 1.0 db 2.0 db 3.0 db 5.0 db typical static characteristics figure 6. dc current gain i c , collector current (ma) 400 0.003 h , dc current gain fe t j = 125 c -55 c 25 c v ce = 1.0 v v ce = 10 v 40 60 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 100 80
BCX71JLT1G http://onsemi.com 4 typical static characteristics figure 7. collector saturation region i c , collector current (ma) 1.4 figure 8. collector characteristics i c , collector current (ma) v, voltage (volts) 1.0 2.0 5.0 10 20 50 1.6 100 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = 1.0 v * vc for v ce(sat) vb for v be 0.1 0.2 0.5 figure 9. ?on? voltages i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0 v ce , collector-emitter voltage (volts ) 0.002 t a = 25 c i c = 1.0 ma 10 ma 100 ma figure 10. temperature coefficients 50 ma v ce , collector-emitter voltage (volts) 40 60 80 100 20 0 0 i c , collector current (ma) t a = 25 c pulse width = 300 s duty cycle 2.0% i b = 400 a 350 a 300 a 250 a 200 a *applies for i c /i b h fe /2 25 c to 125 c -55 c to 25 c 25 c to 125 c -55 c to 25 c 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 5.0 10 15 20 25 30 35 40 1.2 1.0 0.8 0.6 0.4 0.2 0 2.4 0.8 0 1.6 0.8 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 v , temperature coefficients (mv/ c) 150 a 100 a 50 a figure 11. turn ? on time i c , collector current (ma) 500 figure 12. turn ? off time i c , collector current (ma) 2.0 5.0 10 20 30 50 1000 3.0 1.0 t, time (ns) t, time (ns) 5.0 7.0 10 20 30 50 70 100 300 7.0 70 100 v cc = 3.0 v i c /i b = 10 t j = 25 c t d @ v be(off) = 0.5 v t r 10 20 30 50 70 100 200 300 500 700 - 2.0 -1.0 v cc = - 3.0 v i c /i b = 10 i b1 = i b2 t j = 25 c t s t f 200 - 3.0 - 5.0 - 7.0 - 20 -10 - 30 - 50 - 70 -100
BCX71JLT1G http://onsemi.com 5 typical dynamic characteristics c, capacitance (pf) figure 13. current ? gain ? bandwidth product i c , collector current (ma) figure 14. capacitance v r , reverse voltage (volts) 500 0.5 10 f, current-gain bandwidth product (mhz ) t 50 70 100 200 300 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 t j = 25 c v ce = 20 v 5.0 v 1.0 2.0 3.0 5.0 7.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 0.05 c ib c ob t j = 25 c figure 15. input impedance i c , collector current (ma) figure 16. output admittance i c , collector current (ma) h , output admittance ( mhos) oe h ie , input impedance (k ) 2.0 5.0 10 20 50 1.0 0.2 100 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.1 0.2 0.5 v ce = -10 vdc f = 1.0 khz t a = 25 c 2.0 5.0 10 20 50 1.0 2.0 100 3.0 5.0 7.0 10 20 30 50 70 100 200 0.1 0.2 0.5 v ce = 10 vdc f = 1.0 khz t a = 25 c h fe 200 @ i c = ? 1.0 ma h fe 200 @ i c = 1.0 ma t j , junction temperature ( c) 10 4 -4 0 i c , collector current (na) figure 17. typical collector leakage current 10 -2 10 -1 10 0 10 1 10 2 10 3 -2 0 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140+ 160 v cc = 30 v i ceo i cbo and i cex @ v be(off) = 3.0 v
BCX71JLT1G http://onsemi.com 6 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue an d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 318 ? 01 thru ? 07 and ? 09 obsolete, new standard 318 ? 08. view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h style 6: pin 1. base 2. emitter 3. collector 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. bcx71j/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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